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Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

In this manuscript, recent progress in the area of resistive random access memory (RRAM) technology which is considered one of the most standout emerging memory technologies owing to its high speed, low cost, enhanced storage density, potential applications in various fields, and excellent scalabili...

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Autores principales: Zahoor, Furqan, Azni Zulkifli, Tun Zainal, Khanday, Farooq Ahmad
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7176808/
https://www.ncbi.nlm.nih.gov/pubmed/32323059
http://dx.doi.org/10.1186/s11671-020-03299-9
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author Zahoor, Furqan
Azni Zulkifli, Tun Zainal
Khanday, Farooq Ahmad
author_facet Zahoor, Furqan
Azni Zulkifli, Tun Zainal
Khanday, Farooq Ahmad
author_sort Zahoor, Furqan
collection PubMed
description In this manuscript, recent progress in the area of resistive random access memory (RRAM) technology which is considered one of the most standout emerging memory technologies owing to its high speed, low cost, enhanced storage density, potential applications in various fields, and excellent scalability is comprehensively reviewed. First, a brief overview of the field of emerging memory technologies is provided. The material properties, resistance switching mechanism, and electrical characteristics of RRAM are discussed. Also, various issues such as endurance, retention, uniformity, and the effect of operating temperature and random telegraph noise (RTN) are elaborated. A discussion on multilevel cell (MLC) storage capability of RRAM, which is attractive for achieving increased storage density and low cost is presented. Different operation schemes to achieve reliable MLC operation along with their physical mechanisms have been provided. In addition, an elaborate description of switching methodologies and current voltage relationships for various popular RRAM models is covered in this work. The prospective applications of RRAM to various fields such as security, neuromorphic computing, and non-volatile logic systems are addressed briefly. The present review article concludes with the discussion on the challenges and future prospects of the RRAM.
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spelling pubmed-71768082020-04-28 Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications Zahoor, Furqan Azni Zulkifli, Tun Zainal Khanday, Farooq Ahmad Nanoscale Res Lett Nano Review In this manuscript, recent progress in the area of resistive random access memory (RRAM) technology which is considered one of the most standout emerging memory technologies owing to its high speed, low cost, enhanced storage density, potential applications in various fields, and excellent scalability is comprehensively reviewed. First, a brief overview of the field of emerging memory technologies is provided. The material properties, resistance switching mechanism, and electrical characteristics of RRAM are discussed. Also, various issues such as endurance, retention, uniformity, and the effect of operating temperature and random telegraph noise (RTN) are elaborated. A discussion on multilevel cell (MLC) storage capability of RRAM, which is attractive for achieving increased storage density and low cost is presented. Different operation schemes to achieve reliable MLC operation along with their physical mechanisms have been provided. In addition, an elaborate description of switching methodologies and current voltage relationships for various popular RRAM models is covered in this work. The prospective applications of RRAM to various fields such as security, neuromorphic computing, and non-volatile logic systems are addressed briefly. The present review article concludes with the discussion on the challenges and future prospects of the RRAM. Springer US 2020-04-22 /pmc/articles/PMC7176808/ /pubmed/32323059 http://dx.doi.org/10.1186/s11671-020-03299-9 Text en © The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Nano Review
Zahoor, Furqan
Azni Zulkifli, Tun Zainal
Khanday, Farooq Ahmad
Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications
title Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications
title_full Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications
title_fullStr Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications
title_full_unstemmed Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications
title_short Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications
title_sort resistive random access memory (rram): an overview of materials, switching mechanism, performance, multilevel cell (mlc) storage, modeling, and applications
topic Nano Review
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7176808/
https://www.ncbi.nlm.nih.gov/pubmed/32323059
http://dx.doi.org/10.1186/s11671-020-03299-9
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