Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlO(x)N(y) MIS Gate

This study investigated the effects of a thin aluminum oxynitride (AlO(x)N(y)) gate insulator on the electrical characteristics of AlGaN/GaN-on-SiC metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs). The fabricated AlGaN/GaN-on-SiC MIS-HEMTs exhibited a significant reductio...

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Detalles Bibliográficos
Autores principales: Kim, Hyun-Seop, Kang, Myoung-Jin, Kim, Jeong Jin, Seo, Kwang-Seok, Cha, Ho-Young
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7177355/
https://www.ncbi.nlm.nih.gov/pubmed/32230767
http://dx.doi.org/10.3390/ma13071538

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7177355/
https://www.ncbi.nlm.nih.gov/pubmed/32230767
http://dx.doi.org/10.3390/ma13071538

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