Stress Distribution in Silicon Subjected to Atomic Scale Grinding with a Curved Tool Path

Molecular dynamics (MD) simulations were applied to study the fundamental mechanism of nanoscale grinding with a modeled tool trajectory of straight lines. Nevertheless, these models ignore curvature changes of actual tool paths, which need optimization to facilitate understanding of the underlying...

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Detalles Bibliográficos
Autores principales: Fang, Xudong, Kang, Qiang, Ding, Jianjun, Sun, Lin, Maeda, Ryutaro, Jiang, Zhuangde
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7178638/
https://www.ncbi.nlm.nih.gov/pubmed/32268524
http://dx.doi.org/10.3390/ma13071710

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7178638/
https://www.ncbi.nlm.nih.gov/pubmed/32268524
http://dx.doi.org/10.3390/ma13071710

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