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Stress Distribution in Silicon Subjected to Atomic Scale Grinding with a Curved Tool Path
Molecular dynamics (MD) simulations were applied to study the fundamental mechanism of nanoscale grinding with a modeled tool trajectory of straight lines. Nevertheless, these models ignore curvature changes of actual tool paths, which need optimization to facilitate understanding of the underlying...
Autores principales: | Fang, Xudong, Kang, Qiang, Ding, Jianjun, Sun, Lin, Maeda, Ryutaro, Jiang, Zhuangde |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7178638/ https://www.ncbi.nlm.nih.gov/pubmed/32268524 http://dx.doi.org/10.3390/ma13071710 |
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