Inkjet-Printed Molybdenum Disulfide and Nitrogen-Doped Graphene Active Layer High On/Off Ratio Transistors

Fully inkjet-printed device fabrication is a crucial goal to enable large-area printed electronics. The limited number of two-dimensional (2D) material inks, the bottom-gated structures, and the low current on/off ratio of thin-film transistors (TFTs) has impeded the practical applications of the pr...

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Detalles Bibliográficos
Autores principales: Jewel, Mohi Uddin, Monne, Mahmuda Akter, Mishra, Bhagyashree, Chen, Maggie Yihong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7179098/
https://www.ncbi.nlm.nih.gov/pubmed/32121080
http://dx.doi.org/10.3390/molecules25051081

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7179098/
https://www.ncbi.nlm.nih.gov/pubmed/32121080
http://dx.doi.org/10.3390/molecules25051081

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