Effect of Deep-Level Defects on the Performance of CdZnTe Photon Counting Detectors

The effect of deep-level defects is a key issue for the applications of CdZnTe high-flux photon counting devices of X-ray irradiations. However, the major trap energy levels and their quantitive relationship with the device’s performance are not yet clearly understood. In this study, a 16-pixel CdZn...

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Detalles Bibliográficos
Autores principales: Li, Yingrui, Zha, Gangqiang, Wei, Dengke, Yang, Fan, Dong, Jiangpeng, Xi, Shouzhi, Xu, Lingyan, Jie, Wanqi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7180852/
https://www.ncbi.nlm.nih.gov/pubmed/32260424
http://dx.doi.org/10.3390/s20072032

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7180852/
https://www.ncbi.nlm.nih.gov/pubmed/32260424
http://dx.doi.org/10.3390/s20072032

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