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Effect of Deep-Level Defects on the Performance of CdZnTe Photon Counting Detectors
The effect of deep-level defects is a key issue for the applications of CdZnTe high-flux photon counting devices of X-ray irradiations. However, the major trap energy levels and their quantitive relationship with the device’s performance are not yet clearly understood. In this study, a 16-pixel CdZn...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7180852/ https://www.ncbi.nlm.nih.gov/pubmed/32260424 http://dx.doi.org/10.3390/s20072032 |