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Effect of substitutional defects on resonant tunneling diodes based on armchair graphene and boron nitride nanoribbons lateral heterojunctions
A nanometer-scaled resonant tunneling diode based on lateral heterojunctions of armchair graphene and boron nitride nanoribbons, exhibiting negative differential resistance is proposed. Low-bandgap armchair graphene nanoribbons and high-bandgap armchair boron nitride nanoribbons are used to design t...
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Beilstein-Institut
2020
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7188999/ https://www.ncbi.nlm.nih.gov/pubmed/32395399 http://dx.doi.org/10.3762/bjnano.11.56 |