Cargando…

Test Pattern Design for Plasma Induced Damage on Inter-Metal Dielectric in FinFET Cu BEOL Processes

High-density interconnects, enabled by advanced CMOS Cu BEOL technologies, lead to closely placed metals layers. High-aspect ratio metal lines require extensive plasma etching processes, which may cause reliability concerns on inter metal dielectric (IMD) layers. This study presents newly proposed t...

Descripción completa

Detalles Bibliográficos
Autores principales: Su, Chi, Tsai, Yi-Pei, Lin, Chrong-Jung, King, Ya-Chin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7195507/
https://www.ncbi.nlm.nih.gov/pubmed/32358682
http://dx.doi.org/10.1186/s11671-020-03328-7