Prominent radiative contributions from multiply-excited states in laser-produced tin plasma for nanolithography

Extreme ultraviolet (EUV) lithography is currently entering high-volume manufacturing to enable the continued miniaturization of semiconductor devices. The required EUV light, at 13.5 nm wavelength, is produced in a hot and dense laser-driven tin plasma. The atomic origins of this light are demonstr...

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Detalles Bibliográficos
Autores principales: Torretti, F., Sheil, J., Schupp, R., Basko, M. M., Bayraktar, M., Meijer, R. A., Witte, S., Ubachs, W., Hoekstra, R., Versolato, O. O., Neukirch, A. J., Colgan, J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7214432/
https://www.ncbi.nlm.nih.gov/pubmed/32393789
http://dx.doi.org/10.1038/s41467-020-15678-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7214432/
https://www.ncbi.nlm.nih.gov/pubmed/32393789
http://dx.doi.org/10.1038/s41467-020-15678-y

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