Quantum Confinement Effect in Amorphous In–Ga–Zn–O Heterojunction Channels for Thin-Film Transistors

Electrical and carrier transport properties in In–Ga–Zn–O thin-film transistors (IGZO TFTs) with a heterojunction channel were investigated. For the heterojunction IGZO channel, a high-In composition IGZO layer (IGZO-high-In) was deposited on a typical compositions IGZO layer (IGZO-111). From the op...

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Detalles Bibliográficos
Autores principales: Koretomo, Daichi, Hamada, Shuhei, Magari, Yusaku, Furuta, Mamoru
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7215306/
https://www.ncbi.nlm.nih.gov/pubmed/32325945
http://dx.doi.org/10.3390/ma13081935

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7215306/
https://www.ncbi.nlm.nih.gov/pubmed/32325945
http://dx.doi.org/10.3390/ma13081935

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