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Quantum Confinement Effect in Amorphous In–Ga–Zn–O Heterojunction Channels for Thin-Film Transistors

Electrical and carrier transport properties in In–Ga–Zn–O thin-film transistors (IGZO TFTs) with a heterojunction channel were investigated. For the heterojunction IGZO channel, a high-In composition IGZO layer (IGZO-high-In) was deposited on a typical compositions IGZO layer (IGZO-111). From the op...

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Detalles Bibliográficos
Autores principales:	Koretomo, Daichi, Hamada, Shuhei, Magari, Yusaku, Furuta, Mamoru
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2020
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7215306/ https://www.ncbi.nlm.nih.gov/pubmed/32325945 http://dx.doi.org/10.3390/ma13081935

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