Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman Analysis

We report a comprehensive investigation on stacking faults (SFs) in the 3C-SiC cross-section epilayer. 3C-SiC growth was performed in a horizontal hot-wall chemical vapour deposition (CVD) reactor. After the growth (85 microns thick), the silicon substrate was completely melted inside the CVD chambe...

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Detalles Bibliográficos
Autores principales: Scuderi, Viviana, Calabretta, Cristiano, Anzalone, Ruggero, Mauceri, Marco, La Via, Francesco
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7215423/
https://www.ncbi.nlm.nih.gov/pubmed/32295087
http://dx.doi.org/10.3390/ma13081837

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7215423/
https://www.ncbi.nlm.nih.gov/pubmed/32295087
http://dx.doi.org/10.3390/ma13081837

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