The Leakage Mechanism of the Package of the AlGaN/GaN Liquid Sensor

Wide bandgap gallium nitride (GaN)-based devices have attracted a lot of attention in optoelectronics, power electronics, and sensing applications. AlGaN/GaN based sensors, featuring high-density and high-mobility two-dimensional electron gas (2DEG), have been demonstrated to be effective chemical s...

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Detalles Bibliográficos
Autores principales: Zhang, Hanyuan, Yang, Shu, Sheng, Kuang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7216000/
https://www.ncbi.nlm.nih.gov/pubmed/32316694
http://dx.doi.org/10.3390/ma13081903

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7216000/
https://www.ncbi.nlm.nih.gov/pubmed/32316694
http://dx.doi.org/10.3390/ma13081903

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