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The Leakage Mechanism of the Package of the AlGaN/GaN Liquid Sensor
Wide bandgap gallium nitride (GaN)-based devices have attracted a lot of attention in optoelectronics, power electronics, and sensing applications. AlGaN/GaN based sensors, featuring high-density and high-mobility two-dimensional electron gas (2DEG), have been demonstrated to be effective chemical s...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2020
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7216000/ https://www.ncbi.nlm.nih.gov/pubmed/32316694 http://dx.doi.org/10.3390/ma13081903 |