Improving Radiation Resistance of GaInP/GaInAs/Ge Triple-Junction Solar Cells Using GaInP Back-Surface Field in the Middle Subcell

This paper studies the radiation resistance for GaInP/GaInAs/Ge triple-junction space solar cells with a GaInP back-surface field (BSF) in the GaInAs middle subcell compared with those with an AlGaAs BSF. The results show that the initial electrical performance is almost the same for both of them. H...

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Detalles Bibliográficos
Autores principales: Gao, Hui, Yang, Ruixia, Zhang, Yonghui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7216055/
https://www.ncbi.nlm.nih.gov/pubmed/32331238
http://dx.doi.org/10.3390/ma13081958

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7216055/
https://www.ncbi.nlm.nih.gov/pubmed/32331238
http://dx.doi.org/10.3390/ma13081958

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