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An Experiment-Based Profile Function for the Calculation of Damage Distribution in Bulk Silicon Induced by a Helium Focused Ion Beam Process
The helium focused ion beam (He-FIB) is widely used in the field of nanostructure fabrication due to its high resolution. Complicated forms of processing damage induced by He-FIB can be observed in substrates, and these damages have a severe impact on nanostructure processing. This study experimenta...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2020
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7219045/ https://www.ncbi.nlm.nih.gov/pubmed/32316545 http://dx.doi.org/10.3390/s20082306 |