Use of High-Field Electron Injection into Dielectrics to Enhance Functional Capabilities of Radiation MOS Sensors

The paper suggests a design of radiation sensors based on metal-oxide-semiconductor (MOS) structures and p-channel radiation sensitive field effect transistors (RADFET) which are capable to function under conditions of high-field tunnel injection of electrons into the dielectric. We demonstrate that...

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Detalles Bibliográficos
Autores principales: Andreev, Dmitrii V., Bondarenko, Gennady G., Andreev, Vladimir V., Stolyarov, Alexander A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7219320/
https://www.ncbi.nlm.nih.gov/pubmed/32331462
http://dx.doi.org/10.3390/s20082382

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7219320/
https://www.ncbi.nlm.nih.gov/pubmed/32331462
http://dx.doi.org/10.3390/s20082382

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