Piezoelectric BiFeO(3) Thin Films: Optimization of MOCVD Process on Si

This paper presents a simple and optimized metal organic chemical vapor deposition (MOCVD) protocol for the deposition of perovskite BiFeO(3) films on silicon-based substrates, in order to move toward the next generation of lead-free hybrid energy harvesters. A bi-metal mixture that is composed of Bi(phenyl)(3), and Fe(tmhd)(3) has been used as a precursor source. BiFeO(3) films have been grown by MOCVD on IrO(2)/Si substrates, in which the conductive IrO(2) functions as a bottom electrode and a buffer layer. BiFeO(3) films have been analyzed by X-ray diffraction (XRD) for structural characterization and by field-emission scanning electron microscopy (FE-SEM) coupled with energy dispersive X-ray (EDX) analysis for the morphological and chemical characterizations, respectively. These studies have shown that the deposited films are polycrystalline, pure BiFeO(3) phase highly homogenous in morphology and composition all over the entire substrate surface. Piezoelectric force microscopy (PFM) and Piezoelectric Force Spectroscopy (PFS) checked the piezoelectric and ferroelectric properties of the film.