Conductive Atomic Force Microscopy of Semiconducting Transition Metal Dichalcogenides and Heterostructures

Semiconducting transition metal dichalcogenides (TMDs) are promising materials for future electronic and optoelectronic applications. However, their electronic properties are strongly affected by peculiar nanoscale defects/inhomogeneities (point or complex defects, thickness fluctuations, grain boun...

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Detalles Bibliográficos
Autores principales: Giannazzo, Filippo, Schilirò, Emanuela, Greco, Giuseppe, Roccaforte, Fabrizio
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7221570/
https://www.ncbi.nlm.nih.gov/pubmed/32331313
http://dx.doi.org/10.3390/nano10040803

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7221570/
https://www.ncbi.nlm.nih.gov/pubmed/32331313
http://dx.doi.org/10.3390/nano10040803

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