Cargando…
Conductive Atomic Force Microscopy of Semiconducting Transition Metal Dichalcogenides and Heterostructures
Semiconducting transition metal dichalcogenides (TMDs) are promising materials for future electronic and optoelectronic applications. However, their electronic properties are strongly affected by peculiar nanoscale defects/inhomogeneities (point or complex defects, thickness fluctuations, grain boun...
Autores principales: | Giannazzo, Filippo, Schilirò, Emanuela, Greco, Giuseppe, Roccaforte, Fabrizio |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2020
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7221570/ https://www.ncbi.nlm.nih.gov/pubmed/32331313 http://dx.doi.org/10.3390/nano10040803 |
Ejemplares similares
-
Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides
por: Jeong, Tae Young, et al.
Publicado: (2019) -
Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization
por: Greco, Giuseppe, et al.
Publicado: (2011) -
Atomic Force Microscopy Study of the Kinetic Roughening in Nanostructured Gold Films on SiO(2)
por: Ruffino, F, et al.
Publicado: (2009) -
Al(2)O(3) Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices
por: Schilirò, Emanuela, et al.
Publicado: (2023) -
Non-Additive Optical Response in Transition Metal Dichalcogenides Heterostructures
por: El-Sayed, Marwa A., et al.
Publicado: (2022)