Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors

Stacked SiGe/Si structures are widely used as the units for gate-all-around nanowire transistors (GAA NWTs) which are a promising candidate beyond fin field effective transistors (FinFETs) technologies in near future. These structures deal with a several challenges brought by the shrinking of device...

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Detalles Bibliográficos
Autores principales: Li, Junjie, Li, Yongliang, Zhou, Na, Xiong, Wenjuan, Wang, Guilei, Zhang, Qingzhu, Du, Anyan, Gao, Jianfeng, Kong, Zhenzhen, Lin, Hongxiao, Xiang, Jinjuan, Li, Chen, Yin, Xiaogen, Wang, Xiaolei, Yang, Hong, Ma, Xueli, Han, Jianghao, Zhang, Jing, Hu, Tairan, Cao, Zhe, Yang, Tao, Li, Junfeng, Yin, Huaxiang, Zhu, Huilong, Luo, Jun, Wang, Wenwu, Radamson, Henry H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7221596/
https://www.ncbi.nlm.nih.gov/pubmed/32326106
http://dx.doi.org/10.3390/nano10040793

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7221596/
https://www.ncbi.nlm.nih.gov/pubmed/32326106
http://dx.doi.org/10.3390/nano10040793

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