Cargando…

Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors

Stacked SiGe/Si structures are widely used as the units for gate-all-around nanowire transistors (GAA NWTs) which are a promising candidate beyond fin field effective transistors (FinFETs) technologies in near future. These structures deal with a several challenges brought by the shrinking of device...

Descripción completa

Detalles Bibliográficos
Autores principales: Li, Junjie, Li, Yongliang, Zhou, Na, Xiong, Wenjuan, Wang, Guilei, Zhang, Qingzhu, Du, Anyan, Gao, Jianfeng, Kong, Zhenzhen, Lin, Hongxiao, Xiang, Jinjuan, Li, Chen, Yin, Xiaogen, Wang, Xiaolei, Yang, Hong, Ma, Xueli, Han, Jianghao, Zhang, Jing, Hu, Tairan, Cao, Zhe, Yang, Tao, Li, Junfeng, Yin, Huaxiang, Zhu, Huilong, Luo, Jun, Wang, Wenwu, Radamson, Henry H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7221596/
https://www.ncbi.nlm.nih.gov/pubmed/32326106
http://dx.doi.org/10.3390/nano10040793
_version_ 1783533396937408512
author Li, Junjie
Li, Yongliang
Zhou, Na
Xiong, Wenjuan
Wang, Guilei
Zhang, Qingzhu
Du, Anyan
Gao, Jianfeng
Kong, Zhenzhen
Lin, Hongxiao
Xiang, Jinjuan
Li, Chen
Yin, Xiaogen
Wang, Xiaolei
Yang, Hong
Ma, Xueli
Han, Jianghao
Zhang, Jing
Hu, Tairan
Cao, Zhe
Yang, Tao
Li, Junfeng
Yin, Huaxiang
Zhu, Huilong
Luo, Jun
Wang, Wenwu
Radamson, Henry H.
author_facet Li, Junjie
Li, Yongliang
Zhou, Na
Xiong, Wenjuan
Wang, Guilei
Zhang, Qingzhu
Du, Anyan
Gao, Jianfeng
Kong, Zhenzhen
Lin, Hongxiao
Xiang, Jinjuan
Li, Chen
Yin, Xiaogen
Wang, Xiaolei
Yang, Hong
Ma, Xueli
Han, Jianghao
Zhang, Jing
Hu, Tairan
Cao, Zhe
Yang, Tao
Li, Junfeng
Yin, Huaxiang
Zhu, Huilong
Luo, Jun
Wang, Wenwu
Radamson, Henry H.
author_sort Li, Junjie
collection PubMed
description Stacked SiGe/Si structures are widely used as the units for gate-all-around nanowire transistors (GAA NWTs) which are a promising candidate beyond fin field effective transistors (FinFETs) technologies in near future. These structures deal with a several challenges brought by the shrinking of device dimensions. The preparation of inner spacers is one of the most critical processes for GAA nano-scale transistors. This study focuses on two key processes: inner spacer film conformal deposition and accurate etching. The results show that low pressure chemical vapor deposition (LPCVD) silicon nitride has a good film filling effect; a precise and controllable silicon nitride inner spacer structure is prepared by using an inductively coupled plasma (ICP) tool and a new gas mixtures of CH(2)F(2)/CH(4)/O(2)/Ar. Silicon nitride inner spacer etch has a high etch selectivity ratio, exceeding 100:1 to Si and more than 30:1 to SiO(2). High anisotropy with an excellent vertical/lateral etch ratio exceeding 80:1 is successfully demonstrated. It also provides a solution to the key process challenges of nano-transistors beyond 5 nm node.
format Online
Article
Text
id pubmed-7221596
institution National Center for Biotechnology Information
language English
publishDate 2020
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-72215962020-05-22 Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors Li, Junjie Li, Yongliang Zhou, Na Xiong, Wenjuan Wang, Guilei Zhang, Qingzhu Du, Anyan Gao, Jianfeng Kong, Zhenzhen Lin, Hongxiao Xiang, Jinjuan Li, Chen Yin, Xiaogen Wang, Xiaolei Yang, Hong Ma, Xueli Han, Jianghao Zhang, Jing Hu, Tairan Cao, Zhe Yang, Tao Li, Junfeng Yin, Huaxiang Zhu, Huilong Luo, Jun Wang, Wenwu Radamson, Henry H. Nanomaterials (Basel) Article Stacked SiGe/Si structures are widely used as the units for gate-all-around nanowire transistors (GAA NWTs) which are a promising candidate beyond fin field effective transistors (FinFETs) technologies in near future. These structures deal with a several challenges brought by the shrinking of device dimensions. The preparation of inner spacers is one of the most critical processes for GAA nano-scale transistors. This study focuses on two key processes: inner spacer film conformal deposition and accurate etching. The results show that low pressure chemical vapor deposition (LPCVD) silicon nitride has a good film filling effect; a precise and controllable silicon nitride inner spacer structure is prepared by using an inductively coupled plasma (ICP) tool and a new gas mixtures of CH(2)F(2)/CH(4)/O(2)/Ar. Silicon nitride inner spacer etch has a high etch selectivity ratio, exceeding 100:1 to Si and more than 30:1 to SiO(2). High anisotropy with an excellent vertical/lateral etch ratio exceeding 80:1 is successfully demonstrated. It also provides a solution to the key process challenges of nano-transistors beyond 5 nm node. MDPI 2020-04-20 /pmc/articles/PMC7221596/ /pubmed/32326106 http://dx.doi.org/10.3390/nano10040793 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Li, Junjie
Li, Yongliang
Zhou, Na
Xiong, Wenjuan
Wang, Guilei
Zhang, Qingzhu
Du, Anyan
Gao, Jianfeng
Kong, Zhenzhen
Lin, Hongxiao
Xiang, Jinjuan
Li, Chen
Yin, Xiaogen
Wang, Xiaolei
Yang, Hong
Ma, Xueli
Han, Jianghao
Zhang, Jing
Hu, Tairan
Cao, Zhe
Yang, Tao
Li, Junfeng
Yin, Huaxiang
Zhu, Huilong
Luo, Jun
Wang, Wenwu
Radamson, Henry H.
Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors
title Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors
title_full Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors
title_fullStr Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors
title_full_unstemmed Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors
title_short Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors
title_sort study of silicon nitride inner spacer formation in process of gate-all-around nano-transistors
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7221596/
https://www.ncbi.nlm.nih.gov/pubmed/32326106
http://dx.doi.org/10.3390/nano10040793
work_keys_str_mv AT lijunjie studyofsiliconnitrideinnerspacerformationinprocessofgateallaroundnanotransistors
AT liyongliang studyofsiliconnitrideinnerspacerformationinprocessofgateallaroundnanotransistors
AT zhouna studyofsiliconnitrideinnerspacerformationinprocessofgateallaroundnanotransistors
AT xiongwenjuan studyofsiliconnitrideinnerspacerformationinprocessofgateallaroundnanotransistors
AT wangguilei studyofsiliconnitrideinnerspacerformationinprocessofgateallaroundnanotransistors
AT zhangqingzhu studyofsiliconnitrideinnerspacerformationinprocessofgateallaroundnanotransistors
AT duanyan studyofsiliconnitrideinnerspacerformationinprocessofgateallaroundnanotransistors
AT gaojianfeng studyofsiliconnitrideinnerspacerformationinprocessofgateallaroundnanotransistors
AT kongzhenzhen studyofsiliconnitrideinnerspacerformationinprocessofgateallaroundnanotransistors
AT linhongxiao studyofsiliconnitrideinnerspacerformationinprocessofgateallaroundnanotransistors
AT xiangjinjuan studyofsiliconnitrideinnerspacerformationinprocessofgateallaroundnanotransistors
AT lichen studyofsiliconnitrideinnerspacerformationinprocessofgateallaroundnanotransistors
AT yinxiaogen studyofsiliconnitrideinnerspacerformationinprocessofgateallaroundnanotransistors
AT wangxiaolei studyofsiliconnitrideinnerspacerformationinprocessofgateallaroundnanotransistors
AT yanghong studyofsiliconnitrideinnerspacerformationinprocessofgateallaroundnanotransistors
AT maxueli studyofsiliconnitrideinnerspacerformationinprocessofgateallaroundnanotransistors
AT hanjianghao studyofsiliconnitrideinnerspacerformationinprocessofgateallaroundnanotransistors
AT zhangjing studyofsiliconnitrideinnerspacerformationinprocessofgateallaroundnanotransistors
AT hutairan studyofsiliconnitrideinnerspacerformationinprocessofgateallaroundnanotransistors
AT caozhe studyofsiliconnitrideinnerspacerformationinprocessofgateallaroundnanotransistors
AT yangtao studyofsiliconnitrideinnerspacerformationinprocessofgateallaroundnanotransistors
AT lijunfeng studyofsiliconnitrideinnerspacerformationinprocessofgateallaroundnanotransistors
AT yinhuaxiang studyofsiliconnitrideinnerspacerformationinprocessofgateallaroundnanotransistors
AT zhuhuilong studyofsiliconnitrideinnerspacerformationinprocessofgateallaroundnanotransistors
AT luojun studyofsiliconnitrideinnerspacerformationinprocessofgateallaroundnanotransistors
AT wangwenwu studyofsiliconnitrideinnerspacerformationinprocessofgateallaroundnanotransistors
AT radamsonhenryh studyofsiliconnitrideinnerspacerformationinprocessofgateallaroundnanotransistors