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Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors
Stacked SiGe/Si structures are widely used as the units for gate-all-around nanowire transistors (GAA NWTs) which are a promising candidate beyond fin field effective transistors (FinFETs) technologies in near future. These structures deal with a several challenges brought by the shrinking of device...
Autores principales: | , , , , , , , , , , , , , , , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7221596/ https://www.ncbi.nlm.nih.gov/pubmed/32326106 http://dx.doi.org/10.3390/nano10040793 |
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author | Li, Junjie Li, Yongliang Zhou, Na Xiong, Wenjuan Wang, Guilei Zhang, Qingzhu Du, Anyan Gao, Jianfeng Kong, Zhenzhen Lin, Hongxiao Xiang, Jinjuan Li, Chen Yin, Xiaogen Wang, Xiaolei Yang, Hong Ma, Xueli Han, Jianghao Zhang, Jing Hu, Tairan Cao, Zhe Yang, Tao Li, Junfeng Yin, Huaxiang Zhu, Huilong Luo, Jun Wang, Wenwu Radamson, Henry H. |
author_facet | Li, Junjie Li, Yongliang Zhou, Na Xiong, Wenjuan Wang, Guilei Zhang, Qingzhu Du, Anyan Gao, Jianfeng Kong, Zhenzhen Lin, Hongxiao Xiang, Jinjuan Li, Chen Yin, Xiaogen Wang, Xiaolei Yang, Hong Ma, Xueli Han, Jianghao Zhang, Jing Hu, Tairan Cao, Zhe Yang, Tao Li, Junfeng Yin, Huaxiang Zhu, Huilong Luo, Jun Wang, Wenwu Radamson, Henry H. |
author_sort | Li, Junjie |
collection | PubMed |
description | Stacked SiGe/Si structures are widely used as the units for gate-all-around nanowire transistors (GAA NWTs) which are a promising candidate beyond fin field effective transistors (FinFETs) technologies in near future. These structures deal with a several challenges brought by the shrinking of device dimensions. The preparation of inner spacers is one of the most critical processes for GAA nano-scale transistors. This study focuses on two key processes: inner spacer film conformal deposition and accurate etching. The results show that low pressure chemical vapor deposition (LPCVD) silicon nitride has a good film filling effect; a precise and controllable silicon nitride inner spacer structure is prepared by using an inductively coupled plasma (ICP) tool and a new gas mixtures of CH(2)F(2)/CH(4)/O(2)/Ar. Silicon nitride inner spacer etch has a high etch selectivity ratio, exceeding 100:1 to Si and more than 30:1 to SiO(2). High anisotropy with an excellent vertical/lateral etch ratio exceeding 80:1 is successfully demonstrated. It also provides a solution to the key process challenges of nano-transistors beyond 5 nm node. |
format | Online Article Text |
id | pubmed-7221596 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-72215962020-05-22 Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors Li, Junjie Li, Yongliang Zhou, Na Xiong, Wenjuan Wang, Guilei Zhang, Qingzhu Du, Anyan Gao, Jianfeng Kong, Zhenzhen Lin, Hongxiao Xiang, Jinjuan Li, Chen Yin, Xiaogen Wang, Xiaolei Yang, Hong Ma, Xueli Han, Jianghao Zhang, Jing Hu, Tairan Cao, Zhe Yang, Tao Li, Junfeng Yin, Huaxiang Zhu, Huilong Luo, Jun Wang, Wenwu Radamson, Henry H. Nanomaterials (Basel) Article Stacked SiGe/Si structures are widely used as the units for gate-all-around nanowire transistors (GAA NWTs) which are a promising candidate beyond fin field effective transistors (FinFETs) technologies in near future. These structures deal with a several challenges brought by the shrinking of device dimensions. The preparation of inner spacers is one of the most critical processes for GAA nano-scale transistors. This study focuses on two key processes: inner spacer film conformal deposition and accurate etching. The results show that low pressure chemical vapor deposition (LPCVD) silicon nitride has a good film filling effect; a precise and controllable silicon nitride inner spacer structure is prepared by using an inductively coupled plasma (ICP) tool and a new gas mixtures of CH(2)F(2)/CH(4)/O(2)/Ar. Silicon nitride inner spacer etch has a high etch selectivity ratio, exceeding 100:1 to Si and more than 30:1 to SiO(2). High anisotropy with an excellent vertical/lateral etch ratio exceeding 80:1 is successfully demonstrated. It also provides a solution to the key process challenges of nano-transistors beyond 5 nm node. MDPI 2020-04-20 /pmc/articles/PMC7221596/ /pubmed/32326106 http://dx.doi.org/10.3390/nano10040793 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Li, Junjie Li, Yongliang Zhou, Na Xiong, Wenjuan Wang, Guilei Zhang, Qingzhu Du, Anyan Gao, Jianfeng Kong, Zhenzhen Lin, Hongxiao Xiang, Jinjuan Li, Chen Yin, Xiaogen Wang, Xiaolei Yang, Hong Ma, Xueli Han, Jianghao Zhang, Jing Hu, Tairan Cao, Zhe Yang, Tao Li, Junfeng Yin, Huaxiang Zhu, Huilong Luo, Jun Wang, Wenwu Radamson, Henry H. Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors |
title | Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors |
title_full | Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors |
title_fullStr | Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors |
title_full_unstemmed | Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors |
title_short | Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors |
title_sort | study of silicon nitride inner spacer formation in process of gate-all-around nano-transistors |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7221596/ https://www.ncbi.nlm.nih.gov/pubmed/32326106 http://dx.doi.org/10.3390/nano10040793 |
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