In Situ Study of the Impact of Aberration-Corrected Electron-Beam Lithography on the Electronic Transport of Suspended Graphene Devices

The implementation of aberration-corrected electron beam lithography (AC-EBL) in a 200 keV scanning transmission electron microscope (STEM) is a novel technique that could be used for the fabrication of quantum devices based on 2D atomic crystals with single nanometer critical dimensions, allowing t...

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Detalles Bibliográficos
Autores principales: Mizuno, Naomi, Camino, Fernando, Du, Xu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7221667/
https://www.ncbi.nlm.nih.gov/pubmed/32252373
http://dx.doi.org/10.3390/nano10040666

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7221667/
https://www.ncbi.nlm.nih.gov/pubmed/32252373
http://dx.doi.org/10.3390/nano10040666

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