Understanding the Role of Temperature and Drain Current Stress in InSnZnO TFTs with Various Active Layer Thicknesses

Thin-film transistor (TFT) devices composed of metal oxide semiconductors have attracted tremendous research attention globally in recent years. Owing to their ability to offer mobility, metal oxide semiconductor materials can enable high-performance TFTs for next-generation integrated display devic...

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Detalles Bibliográficos
Autores principales: Wang, Dapeng, Furuta, Mamoru, Tomai, Shigekazu, Yano, Koki
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7221933/
https://www.ncbi.nlm.nih.gov/pubmed/32230775
http://dx.doi.org/10.3390/nano10040617

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7221933/
https://www.ncbi.nlm.nih.gov/pubmed/32230775
http://dx.doi.org/10.3390/nano10040617

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