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Understanding the Role of Temperature and Drain Current Stress in InSnZnO TFTs with Various Active Layer Thicknesses
Thin-film transistor (TFT) devices composed of metal oxide semiconductors have attracted tremendous research attention globally in recent years. Owing to their ability to offer mobility, metal oxide semiconductor materials can enable high-performance TFTs for next-generation integrated display devic...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7221933/ https://www.ncbi.nlm.nih.gov/pubmed/32230775 http://dx.doi.org/10.3390/nano10040617 |