Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics

The optimization of mesa etch for a quasi-vertical gallium nitride (GaN) Schottky barrier diode (SBD) by inductively coupled plasma (ICP) etching was comprehensively investigated in this work, including selection of the etching mask, ICP power, radio frequency (RF) power, ratio of mixed gas, flow ra...

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Detalles Bibliográficos
Autores principales: Sun, Yue, Kang, Xuanwu, Zheng, Yingkui, Wei, Ke, Li, Pengfei, Wang, Wenbo, Liu, Xinyu, Zhang, Guoqi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7221978/
https://www.ncbi.nlm.nih.gov/pubmed/32244713
http://dx.doi.org/10.3390/nano10040657

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7221978/
https://www.ncbi.nlm.nih.gov/pubmed/32244713
http://dx.doi.org/10.3390/nano10040657

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