Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects

[Image: see text] Nanowire tunnel field-effect transistors (TFETs) have been proposed as the most advanced one-dimensional (1D) devices that break the thermionic 60 mV/decade of the subthreshold swing (SS) of metal oxide semiconductor field-effect transistors (MOSFETs) by using quantum mechanical ba...

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Detalles Bibliográficos
Autores principales: Saeidi, Ali, Rosca, Teodor, Memisevic, Elvedin, Stolichnov, Igor, Cavalieri, Matteo, Wernersson, Lars-Erik, Ionescu, Adrian M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2020
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7227027/
https://www.ncbi.nlm.nih.gov/pubmed/32293188
http://dx.doi.org/10.1021/acs.nanolett.9b05356

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7227027/
https://www.ncbi.nlm.nih.gov/pubmed/32293188
http://dx.doi.org/10.1021/acs.nanolett.9b05356

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