Infinite Selectivity of Wet SiO(2) Etching in Respect to Al

We propose and demonstrate an unconventional method suitable for releasing microelectromechanical systems devices containing an Al layer by wet etching using SiO(2) as a sacrificial layer. We used 48% HF solution in combination with 20% oleum to keep the HF solution water-free and thus to prevent at...

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Detalles Bibliográficos
Autores principales: Gablech, Imrich, Brodský, Jan, Pekárek, Jan, Neužil, Pavel
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7230285/
https://www.ncbi.nlm.nih.gov/pubmed/32244504
http://dx.doi.org/10.3390/mi11040365

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7230285/
https://www.ncbi.nlm.nih.gov/pubmed/32244504
http://dx.doi.org/10.3390/mi11040365

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