Nanoscale MOSFET as a Potential Room-Temperature Quantum Current Source

Nanoscale metal-oxide-semiconductor field-effect-transistors (MOSFETs) with only one defect at the interface can potentially become a single electron turnstile linking frequency and electronic charge to realize the elusive quantized current source. Charge pumping is often described as a process that...

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Detalles Bibliográficos
Autores principales: Cheung, Kin P., Wang, Chen, Campbell, Jason P.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7230813/
https://www.ncbi.nlm.nih.gov/pubmed/32244342
http://dx.doi.org/10.3390/mi11040364

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7230813/
https://www.ncbi.nlm.nih.gov/pubmed/32244342
http://dx.doi.org/10.3390/mi11040364

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