Cargando…
Nanoscale MOSFET as a Potential Room-Temperature Quantum Current Source
Nanoscale metal-oxide-semiconductor field-effect-transistors (MOSFETs) with only one defect at the interface can potentially become a single electron turnstile linking frequency and electronic charge to realize the elusive quantized current source. Charge pumping is often described as a process that...
| Autores principales: | , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2020
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7230813/ https://www.ncbi.nlm.nih.gov/pubmed/32244342 http://dx.doi.org/10.3390/mi11040364 |