Memristive Non-Volatile Memory Based on Graphene Materials

Resistive random access memory (RRAM), which is considered as one of the most promising next-generation non-volatile memory (NVM) devices and a representative of memristor technologies, demonstrated great potential in acting as an artificial synapse in the industry of neuromorphic systems and artifi...

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Detalles Bibliográficos
Autores principales: Shen, Zongjie, Zhao, Chun, Qi, Yanfei, Mitrovic, Ivona Z., Yang, Li, Wen, Jiacheng, Huang, Yanbo, Li, Puzhuo, Zhao, Cezhou
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7231216/
https://www.ncbi.nlm.nih.gov/pubmed/32218324
http://dx.doi.org/10.3390/mi11040341

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7231216/
https://www.ncbi.nlm.nih.gov/pubmed/32218324
http://dx.doi.org/10.3390/mi11040341

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