Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors

Miniaturization of metal-oxide-semiconductor field effect transistors (MOSFETs) is typically beneficial for their operating characteristics, such as switching speed and power consumption, but at the same time miniaturization also leads to increased variability among nominally identical devices. Adve...

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Detalles Bibliográficos
Autores principales: Stampfer, Bernhard, Schanovsky, Franz, Grasser, Tibor, Waltl, Michael
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7231322/
https://www.ncbi.nlm.nih.gov/pubmed/32340395
http://dx.doi.org/10.3390/mi11040446

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7231322/
https://www.ncbi.nlm.nih.gov/pubmed/32340395
http://dx.doi.org/10.3390/mi11040446

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