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Mottness versus unit-cell doubling as the driver of the insulating state in 1T-TaS(2)
If a material with an odd number of electrons per unit-cell is insulating, Mott localisation may be invoked as an explanation. This is widely accepted for the layered compound 1T-TaS(2), which has a low-temperature insulating phase comprising charge order clusters with 13 unpaired orbitals each. But...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group UK
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7235044/ https://www.ncbi.nlm.nih.gov/pubmed/32424136 http://dx.doi.org/10.1038/s41467-020-16132-9 |