Effects of thermal annealing on localization and strain in core/multishell GaAs/GaNAs/GaAs nanowires

Core/shell nanowire (NW) heterostructures based on III-V semiconductors and related alloys are attractive for optoelectronic and photonic applications owing to the ability to modify their electronic structure via bandgap and strain engineering. Post-growth thermal annealing of such NWs is often invo...

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Detalles Bibliográficos
Autores principales: Balagula, Roman M., Jansson, Mattias, Yukimune, Mitsuki, Stehr, Jan E., Ishikawa, Fumitaro, Chen, Weimin M., Buyanova, Irina A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7237432/
https://www.ncbi.nlm.nih.gov/pubmed/32427905
http://dx.doi.org/10.1038/s41598-020-64958-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7237432/
https://www.ncbi.nlm.nih.gov/pubmed/32427905
http://dx.doi.org/10.1038/s41598-020-64958-6

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