State dependence and temporal evolution of resistance in projected phase change memory

Phase change memory (PCM) is being actively explored for in-memory computing and neuromorphic systems. The ability of a PCM device to store a continuum of resistance values can be exploited to realize arithmetic operations such as matrix-vector multiplications or to realize the synaptic efficacy in...

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Detalles Bibliográficos
Autores principales: Kersting, Benedikt, Ovuka, Vladimir, Jonnalagadda, Vara Prasad, Sousa, Marilyne, Bragaglia, Valeria, Sarwat, Syed Ghazi, Le Gallo, Manuel, Salinga, Martin, Sebastian, Abu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7237438/
https://www.ncbi.nlm.nih.gov/pubmed/32427898
http://dx.doi.org/10.1038/s41598-020-64826-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7237438/
https://www.ncbi.nlm.nih.gov/pubmed/32427898
http://dx.doi.org/10.1038/s41598-020-64826-3

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