Temperature-dependent infrared ellipsometry of Mo-doped VO(2) thin films across the insulator to metal transition

We present a spectroscopic ellipsometry study of Mo-doped VO(2) thin films deposited on silicon substrates for the mid-infrared range. The dielectric functions and conductivity were extracted from analytical fittings of Ψ and Δ ellipsometric angles showing a strong dependence on the dopant concentra...

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Detalles Bibliográficos
Autores principales: Amador-Alvarado, S., Flores-Camacho, J. M., Solís-Zamudio, A., Castro-García, R., Pérez-Huerta, J. S., Antúnez-Cerón, E., Ortega-Gallegos, J., Madrigal-Melchor, J., Agarwal, V., Ariza-Flores, D.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7244498/
https://www.ncbi.nlm.nih.gov/pubmed/32444609
http://dx.doi.org/10.1038/s41598-020-65279-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7244498/
https://www.ncbi.nlm.nih.gov/pubmed/32444609
http://dx.doi.org/10.1038/s41598-020-65279-4

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