Ultrafast Laser Writing Deep inside Silicon with THz-Repetition-Rate Trains of Pulses

Three-dimensional laser writing inside silicon remains today inaccessible with the shortest infrared light pulses unless complex schemes are used to circumvent screening propagation nonlinearities. Here, we explore a new approach irradiating silicon with trains of femtosecond laser pulses at repetit...

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Detalles Bibliográficos
Autores principales: Wang, Andong, Das, Amlan, Grojo, David
Formato: Online Artículo Texto
Lenguaje:English
Publicado: AAAS 2020
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7245002/
https://www.ncbi.nlm.nih.gov/pubmed/32510057
http://dx.doi.org/10.34133/2020/8149764

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7245002/
https://www.ncbi.nlm.nih.gov/pubmed/32510057
http://dx.doi.org/10.34133/2020/8149764

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