ZrO(2) Ferroelectric Field-Effect Transistors Enabled by the Switchable Oxygen Vacancy Dipoles

This paper investigates the impacts of post-rapid thermal anneal (RTA) and thickness of ZrO(2) on the polarization P and electrical characteristics of TaN/ZrO(2)/Ge capacitors and FeFETs, respectively. After the RTA ranging from 350 to 500 °C, TaN/ZrO(2)/Ge capacitors with 2.5 and 4 nm-thick amorpho...

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Detalles Bibliográficos
Autores principales: Liu, Huan, Peng, Yue, Han, Genquan, Liu, Yan, Zhong, Ni, Duan, Chungang, Hao, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7246238/
https://www.ncbi.nlm.nih.gov/pubmed/32449145
http://dx.doi.org/10.1186/s11671-020-03353-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7246238/
https://www.ncbi.nlm.nih.gov/pubmed/32449145
http://dx.doi.org/10.1186/s11671-020-03353-6

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