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Atomic-Resolution EDX, HAADF, and EELS Study of GaAs(1-x)Bi(x) Alloys
The distribution of alloyed atoms in semiconductors often deviates from a random distribution which can have significant effects on the properties of the materials. In this study, scanning transmission electron microscopy techniques are employed to analyze the distribution of Bi in several distinctl...
Autores principales: | , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer US
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7248167/ https://www.ncbi.nlm.nih.gov/pubmed/32451638 http://dx.doi.org/10.1186/s11671-020-03349-2 |