Mitigation of Single-Event Effects in SiGe-HBT Current-Mode Logic Circuits

It has been known that negative feedback loops (internal and external) in a SiGe heterojunction bipolar transistors (HBT) DC current mirrors improve single-event transient (SET) response; both the peak transient current and the settling time significantly decrease. In the present work, we demonstrat...

Descripción completa

Detalles Bibliográficos
Autores principales: Sarker, Md Arifur R., Jung, Seungwoo, Ildefonso, Adrian, Khachatrian, Ani, Buchner, Stephen P., McMorrow, Dale, Paki, Pauline, Cressler, John D., Song, Ickhyun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7248957/
https://www.ncbi.nlm.nih.gov/pubmed/32370003
http://dx.doi.org/10.3390/s20092581

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7248957/
https://www.ncbi.nlm.nih.gov/pubmed/32370003
http://dx.doi.org/10.3390/s20092581

Ejemplares similares