Structural, Optical and Electrical Properties of HfO(2) Thin Films Deposited at Low-Temperature Using Plasma-Enhanced Atomic Layer Deposition

HfO(2) was deposited at 80–250 °C by plasma-enhanced atomic layer deposition (PEALD), and properties were compared with those obtained by using thermal atomic layer deposition (thermal ALD). The ALD window, i.e., the region where the growth per cycle (GPC) is constant, shifted from high temperatures...

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Detalles Bibliográficos
Autores principales: Kim, Kyoung-Mun, Jang, Jin Sub, Yoon, Soon-Gil, Yun, Ju-Young, Chung, Nak-Kwan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7254199/
https://www.ncbi.nlm.nih.gov/pubmed/32344793
http://dx.doi.org/10.3390/ma13092008

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7254199/
https://www.ncbi.nlm.nih.gov/pubmed/32344793
http://dx.doi.org/10.3390/ma13092008

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