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Structural, Optical and Electrical Properties of HfO(2) Thin Films Deposited at Low-Temperature Using Plasma-Enhanced Atomic Layer Deposition
HfO(2) was deposited at 80–250 °C by plasma-enhanced atomic layer deposition (PEALD), and properties were compared with those obtained by using thermal atomic layer deposition (thermal ALD). The ALD window, i.e., the region where the growth per cycle (GPC) is constant, shifted from high temperatures...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7254199/ https://www.ncbi.nlm.nih.gov/pubmed/32344793 http://dx.doi.org/10.3390/ma13092008 |