Structural Transitions in Ge(2)Sb(2)Te(5) Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses

Ge-Sb-Te-based phase change memory alloys have recently attracted a lot of attention due to their promising applications in the fields of photonics, non-volatile data storage, and neuromorphic computing. Of particular interest is the understanding of the structural changes and underlying mechanisms...

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Detalles Bibliográficos
Autores principales: Behrens, Mario, Lotnyk, Andriy, Bryja, Hagen, Gerlach, Jürgen W., Rauschenbach, Bernd
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7254329/
https://www.ncbi.nlm.nih.gov/pubmed/32369916
http://dx.doi.org/10.3390/ma13092082

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7254329/
https://www.ncbi.nlm.nih.gov/pubmed/32369916
http://dx.doi.org/10.3390/ma13092082

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