Phase Formation and High-Temperature Stability of Very Thin Co-Sputtered Ti-Al and Multilayered Ti/Al Films on Thermally Oxidized Si Substrates

Ti-Al thin films with a thickness of 200 nm were prepared either by co-sputtering from elemental Ti and Al targets or as Ti/Al multilayers with 10 and 20 nm individual layer thickness on thermally oxidized Si substrates. Some of the films were covered with a 20-nm-thick SiO [Formula: see text] layer...

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Detalles Bibliográficos
Autores principales: Seifert, Marietta, Lattner, Eric, Menzel, Siegfried B., Oswald, Steffen, Gemming, Thomas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7254394/
https://www.ncbi.nlm.nih.gov/pubmed/32349440
http://dx.doi.org/10.3390/ma13092039

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7254394/
https://www.ncbi.nlm.nih.gov/pubmed/32349440
http://dx.doi.org/10.3390/ma13092039

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