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Doping Dependent Magnetic Behavior in MBE Grown GaAs(1-x)Sb(x) Nanowires
Intrinsic and Te-doped GaAsSb nanowires with diameters ~100–120 nm were grown on a p-type Si(111) substrate by molecular beam epitaxy (MBE). Detailed magnetic, current/voltage and low-energy electron energy loss spectroscopy measurements were performed to investigate the effect of Te-doping. While i...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7265495/ https://www.ncbi.nlm.nih.gov/pubmed/32488009 http://dx.doi.org/10.1038/s41598-020-65805-4 |