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Evaluating the Thermoelectric Properties of BaTiS(3) by Density Functional Theory
[Image: see text] BaTiS(3) is a semiconductor with a small bandgap of ∼0.5 eV and strong transport anisotropy caused primarily by structural anisotropy; it contains well-separated octahedral columns along the [0001] direction and low lattice thermal conductivity, appealing for thermoelectric applica...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2020
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7271404/ https://www.ncbi.nlm.nih.gov/pubmed/32548422 http://dx.doi.org/10.1021/acsomega.0c01139 |