Enhanced Low-Neutron-Flux Sensitivity Effect in Boron-Doped Silicon

Space particle irradiation produces ionization damage and displacement damage in semiconductor devices. The enhanced low dose rate sensitivity (ELDRS) effect caused by ionization damage has attracted wide attention. However, the enhanced low-particle-flux sensitivity effect and its induction mechani...

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Detalles Bibliográficos
Autores principales: Yang, Guixia, Wu, Kunlin, Liu, Jianyong, Zou, Dehui, Li, Junjie, Lu, Yi, Lv, Xueyang, Xu, Jiayun, Qiao, Liang, Liu, Xuqiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7279494/
https://www.ncbi.nlm.nih.gov/pubmed/32380671
http://dx.doi.org/10.3390/nano10050886

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7279494/
https://www.ncbi.nlm.nih.gov/pubmed/32380671
http://dx.doi.org/10.3390/nano10050886

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