Memristive and Synaptic Characteristics of Nitride-Based Heterostructures on Si Substrate

Brain-inspired artificial synaptic devices and neurons have the potential for application in future neuromorphic computing as they consume low energy. In this study, the memristive switching characteristics of a nitride-based device with two amorphous layers (SiN/BN) is investigated. We demonstrate...

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Detalles Bibliográficos
Autores principales: Rahmani, Mehr Khalid, Kim, Min-Hwi, Hussain, Fayyaz, Abbas, Yawar, Ismail, Muhammad, Hong, Kyungho, Mahata, Chandreswar, Choi, Changhwan, Park, Byung-Gook, Kim, Sungjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7279537/
https://www.ncbi.nlm.nih.gov/pubmed/32455892
http://dx.doi.org/10.3390/nano10050994

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7279537/
https://www.ncbi.nlm.nih.gov/pubmed/32455892
http://dx.doi.org/10.3390/nano10050994

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