Cargando…

Memristive and Synaptic Characteristics of Nitride-Based Heterostructures on Si Substrate

Brain-inspired artificial synaptic devices and neurons have the potential for application in future neuromorphic computing as they consume low energy. In this study, the memristive switching characteristics of a nitride-based device with two amorphous layers (SiN/BN) is investigated. We demonstrate...

Descripción completa

Detalles Bibliográficos
Autores principales:	Rahmani, Mehr Khalid, Kim, Min-Hwi, Hussain, Fayyaz, Abbas, Yawar, Ismail, Muhammad, Hong, Kyungho, Mahata, Chandreswar, Choi, Changhwan, Park, Byung-Gook, Kim, Sungjun
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2020
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7279537/ https://www.ncbi.nlm.nih.gov/pubmed/32455892 http://dx.doi.org/10.3390/nano10050994

Ejemplares similares

Memristive Switching and Density-Functional Theory Calculations in Double Nitride Insulating Layers
por: Khan, Sobia Ali, et al.
Publicado: (2022)

Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System
por: Mahata, Chandreswar, et al.
Publicado: (2022)

Improved Resistive Switching with Low-Power Synaptic Behaviors of ZnO/Al(2)O(3) Bilayer Structure
por: Mahata, Chandreswar, et al.
Publicado: (2022)

Mimicking biological synapses with a-HfSiO(x)-based memristor: implications for artificial intelligence and memory applications
por: Ismail, Muhammad, et al.
Publicado: (2023)

Bipolar and Complementary Resistive Switching Characteristics and Neuromorphic System Simulation in a Pt/ZnO/TiN Synaptic Device
por: Khan, Sobia Ali, et al.
Publicado: (2021)

Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering
por: Ismail, Muhammad, et al.
Publicado: (2022)

SnO(2)-Based Memory Device with Filamentary Switching Mechanism for Advanced Data Storage and Computing
por: Ismail, Muhammad, et al.
Publicado: (2023)

Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO(2)/Al(2)O(3)/HfO(2) Based Memristor on ITO Electrode
por: Mahata, Chandreswar, et al.
Publicado: (2020)

Improved resistive switching characteristics of a multi-stacked HfO(2)/Al(2)O(3)/HfO(2) RRAM structure for neuromorphic and synaptic applications: experimental and computational study
por: Khera, Ejaz Ahmad, et al.
Publicado: (2022)

Forming-Free Tunable Analog Switching in WO(x)/TaO(x) Heterojunction for Emulating Electronic Synapses
por: Mahata, Chandreswar, et al.
Publicado: (2022)

Direct growth of hexagonal boron nitride on non-metallic substrates and its heterostructures with graphene
por: Juma, Isaac G., et al.
Publicado: (2021)

Flexible Neural Network Realized by the Probabilistic SiO (x) Memristive Synaptic Array for Energy‐Efficient Image Learning
por: Choi, Sanghyeon, et al.
Publicado: (2022)

Emulating short-term synaptic dynamics with memristive devices
por: Berdan, Radu, et al.
Publicado: (2016)

Synaptic plasticity and learning behaviour in multilevel memristive devices
por: Asif, M., et al.
Publicado: (2023)

Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory
por: Kim, Sungjun, et al.
Publicado: (2017)

Simultaneous emulation of synaptic and intrinsic plasticity using a memristive synapse
por: Sung, Sang Hyun, et al.
Publicado: (2022)

Implementation of Neuro-Memristive Synapse for Long-and Short-Term Bio-Synaptic Plasticity
por: Mannan, Zubaer I., et al.
Publicado: (2021)

Dual Functions of V/SiO(x)/AlO(y)/p(++)Si Device as Selector and Memory
por: Kim, Sungjun, et al.
Publicado: (2018)

Power- and Low-Resistance-State-Dependent, Bipolar Reset-Switching Transitions in SiN-Based Resistive Random-Access Memory
por: Kim, Sungjun, et al.
Publicado: (2016)

Synaptic and Fast Switching Memristance in Porous Silicon-Based Structures
por: Torres-Costa, Vicente, et al.
Publicado: (2019)

Synaptic Plasticity in Memristive Artificial Synapses and Their Robustness Against Noisy Inputs
por: Du, Nan, et al.
Publicado: (2021)

Boron Nitride–Titania Mesoporous Film Heterostructures
por: Ren, Junkai, et al.
Publicado: (2021)

Compliance-Free, Digital SET and Analog RESET Synaptic Characteristics of Sub-Tantalum Oxide Based Neuromorphic Device
por: Abbas, Yawar, et al.
Publicado: (2018)

Lattice mismatch alleviation in p-CdTe/n-Si heterostructure by surface engineering on Si substrate
por: Isah, Mustapha, et al.
Publicado: (2023)

Interplay of multiple synaptic plasticity features in filamentary memristive devices for neuromorphic computing
por: La Barbera, Selina, et al.
Publicado: (2016)

Advances in Emerging Photonic Memristive and Memristive‐Like Devices
por: Wang, Wenxiao, et al.
Publicado: (2022)

Graphene/Si-nanowire heterostructure molecular sensors
por: Kim, Jungkil, et al.
Publicado: (2014)

Non-linear Memristive Synaptic Dynamics for Efficient Unsupervised Learning in Spiking Neural Networks
por: Brivio, Stefano, et al.
Publicado: (2021)

Biaxial Compressive Strain Engineering in Graphene/Boron Nitride Heterostructures
por: Pan, Wei, et al.
Publicado: (2012)

Vertical transport in graphene-hexagonal boron nitride heterostructure devices
por: Bruzzone, Samantha, et al.
Publicado: (2015)

Memristors and memristive systems
por: Tetzlaff, Ronald
Publicado: (2014)

Memristive GAN in Analog
por: Krestinskaya, O., et al.
Publicado: (2020)

Towards the Growth of Hexagonal Boron Nitride on Ge(001)/Si Substrates by Chemical Vapor Deposition
por: Franck, Max, et al.
Publicado: (2022)

Effective mechanical properties of multilayer nano-heterostructures
por: Mukhopadhyay, T., et al.
Publicado: (2017)

Fabrication and properties of ZnO/GaN heterostructure nanocolumnar thin film on Si (111) substrate
por: Wei, Xianqi, et al.
Publicado: (2013)

Extremely large magnetoresistance in few-layer graphene/boron–nitride heterostructures
por: Gopinadhan, Kalon, et al.
Publicado: (2015)

An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity
por: Dang, Phillip, et al.
Publicado: (2021)

Effects of top electrode material in hafnium-oxide-based memristive systems on highly-doped Si
por: Saylan, Sueda, et al.
Publicado: (2020)

Analog monolayer SWCNTs-based memristive 2D structure for energy-efficient deep learning in spiking neural networks
por: Abunahla, Heba, et al.
Publicado: (2023)

Asymptotic Behavior of Memristive Circuits
por: Caravelli, Francesco
Publicado: (2019)

Cannot write session to /tmp/vufind_sessions/sess_n5kg516pijdun9q30i1rtqk87d