The Structural, Electronic, and Optical Properties of Ge/Si Quantum Wells: Lasing at a Wavelength of 1550 nm

The realization of a fully integrated group IV electrically driven laser at room temperature is an essential issue to be solved. We introduced a novel group IV side-emitting laser at a wavelength of 1550 nm based on a 3-layer Ge/Si quantum well (QW). By designing this scheme, we showed that the stru...

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Detalles Bibliográficos
Autores principales: Li, Hongqiang, Wang, Jianing, Bai, Jinjun, Zhang, Shanshan, Zhang, Sai, Sun, Yaqiang, Dou, Qianzhi, Ding, Mingjun, Wang, Youxi, Qu, Dan, Du, Jilin, Tang, Chunxiao, Li, Enbang, Prades, Joan Daniel
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7279557/
https://www.ncbi.nlm.nih.gov/pubmed/32466114
http://dx.doi.org/10.3390/nano10051006

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7279557/
https://www.ncbi.nlm.nih.gov/pubmed/32466114
http://dx.doi.org/10.3390/nano10051006

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